| PART |
Description |
Maker |
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| 2N6576 2N6578 2N6577 |
15 AMPERE NPN DARLINGTON POWER TRAN
15-Ampere NPN Darlington Power Transistors
|
GE Security, Inc.
GE[General Semiconductor]
List of Unclassifed Manufacturers
|
| MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SD2137A 2SB1417 2SB1417A 2SD2137 |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 10A条一（c）|的SOT - 186
10 A, 100 V, PNP, Si, POWER TRANSISTOR
PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| 2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ |
Silicon PNP epitaxial planar type power transistor
Silicon PNP epitaxial planar type(For low-frequency power amplification)
3 A, 80 V, PNP, Si, POWER TRANSISTOR
3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| 2N4919G |
Bipolar Power C77 PNP 3A 60V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
